Verfahren zur Herstellung von Beschichtungen

A method of forming coatings

Procédé de préparation de revêtements

Abstract

A coating is formed on a substrate by depositing a solution comprising a resin containing at least 2 Si-H groups and a solvent in a manner in which at least 5 volume % of the solvent remains in the coating after deposition followed by exposing the coating to an environment comprising a basic catalyst and water at a concentration sufficient to cause condensation of the Si-H groups and evaporating the solvent from the coating to form a porous network coating. The method of the invention is particularly useful for applying low dielectric constant coatings on electronic devices.

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    EP-1383163-A2January 21, 2004Samsung Electronics Co., Ltd.Procédés de formations de couches de dioxyde de silicium par depôt en couches atomiques
    EP-1383163-A3July 07, 2004Samsung Electronics Co., Ltd.Procédés de formations de couches de dioxyde de silicium par depôt en couches atomiques
    US-6558755-B2May 06, 2003Dow Corning Corporation, Axcelis Technologies, Inc.Plasma curing process for porous silica thin film
    US-6576300-B1June 10, 2003Dow Corning Corporation, Axcelis Technologies, Inc.High modulus, low dielectric constant coatings
    US-6759133-B2July 06, 2004Dow Corning CorporationHigh modulus, low dielectric constant coatings
    US-6992019-B2January 31, 2006Samsung Electronics Co., Ltd.Methods for forming silicon dioxide layers on substrates using atomic layer deposition
    US-7077904-B2July 18, 2006Samsung Electronics Co., Ltd.Method for atomic layer deposition (ALD) of silicon oxide film
    US-7084076-B2August 01, 2006Samsung Electronics, Co., Ltd.Method for forming silicon dioxide film using siloxane
    US-7410914-B2August 12, 2008Degussa AgProcess for producing low-k dielectric films
    WO-0170628-A2September 27, 2001Dow Corning Corporation, Axcelis Technologies, Inc.Plasma processing for porous silica thin film
    WO-0170628-A3April 18, 2002Dow Corning, Axcelis Tech IncTraitement au plasma de films minces de silice poreuse
    WO-02091450-A2November 14, 2002International Business Machines CorporationFilm dielectrique a deux phases ordonne, et dispositif a semi-conducteur contenant ce film
    WO-02091450-A3November 27, 2003IbmOrdered two-phase dielectric film, and semiconductor device containing the same
    WO-2005004220-A1January 13, 2005Degussa AgProcess for producing low-k dielectric films
    WO-2009150021-A2December 17, 2009Basf SeMethod of making porous materials and porous materials prepared thereof
    WO-2009150021-A3February 04, 2010Basf SeMethod of making porous materials and porous materials prepared thereof
    WO-2015197122-A1December 30, 2015Ev Group E. Thallner GmbhProcédé d'application d'une couche de silice